Gate-Voltage Dependence of the Hot-Carrier Degradation of Large-Angle-Tilt Implanted Drain (LATID) and Standard LDD N-Mosfet's

摘要

This study reports the gate-voltage dependence of Large-Angle-Tilt Implanted Drain (LATID) and standard Lightly Doped Drain (LDD) technologies of 0.5¿m effective channel-length suitable for 5V operation. It is found that although the strong lateral field reduction improve the LATID performance, acceptor-like oxide traps are revealed in the whole stressing gate-voltage range, a large spread of oxide-traps and a more located lateral extent of interface-traps occur untill the gate-drain overlap region.