Comparative study of hot-carrier degradation in p⁺ and n⁺ poly p-MOSFET's of a 0.5 ¿m CMOS technology

摘要

In this paper, the degradation of p⁺ and n⁺ poly p-MOSFET devices of a 0.5 ¿m technology is studied in detail. The former devices exhibit intrinsically a better hotcarrier hardness. The difference in hot carrier behaviour between the p⁺ and n⁺ poly transistors is attributed mainly to the short channel effect. The p⁺ poly devices are therefore more suited for the realisation of deep submicron devices.