Performance of 0.2 ¿m planar doped pseudomorphic and lattice matched HEMTs on GaAs and InP

摘要

Two types of HEMT transistors with 0.2 ¿m gatelength have been fabricated: pseudomorphic (PM) on GaAs and lattice matched (LM) on InP. An extensive study of the DC and HF-characteristics shows the higher potential of the InP-based devices: extrinsic fT-values up to 141 GHz were obtained. The monolithic integration of the InP LM HEMT's is illustrated by the performance of a coplanar distributed amplifier.