Charge Pumping At Cryogenic Temperatures

摘要

The charge pumping technique is demonstrated and verified to be feasible down to very low temperatures in scaled VLSI MOSFET's. It is shown that the technique can be successfully applied to evaluate the the interface damage due to radiation effects, hot carrier stress and other voltage stress in scaled MOSFET's provided the substrate doping is sufficiently high. A revised model for charge pumping which does not include the process of emission of trapped charge into the substrate is proposed. For comparison results of measurements on devices with lower substrate doping are also presented.