A parametric investigation of the reactive ion etching of InP in CH4/H2 plasmas using response surface methodology

摘要

Response surface methodology (RSM) is applied to study the reactive ion etching (RIE) of InP in CH4/H2 plasmas. Mechanistic information is inferred through careful interpretation of the contour plots derived from RSM. The data enable the process conditions required for specific device applications to be successfully selected.