首页> 外文会议>Solid State Device Research Conference, 1991. ESSDERC '91 >Stripe Width Dependence of OED in Submicron LOCOS Structures - New boundary condition for self-interstitials
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Stripe Width Dependence of OED in Submicron LOCOS Structures - New boundary condition for self-interstitials

机译:亚微米LOCOS结构中OED的条纹宽度依赖性-自填隙的新边界条件

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Phosphorus diffusion in a wide range of oxidation rate was investigated. Based on the experimental data, a new physical model for oxidation rate dependence of oxidation enhanced diffusion is proposed, in which self-interstitial concentration at the Si/SiO2 interface is closely related to the oxidation reaction kinetics. Two dimensional (2-D) simulations for dopant diffusion in submicron LOCOS structures demonstrate the validity of the new boundary condition through the comparison with the experimental data.
机译:研究了磷在广泛的氧化速率中的扩散。基于实验数据,提出了一种新的氧化速率依赖性氧化速率依赖性的物理模型,其中Si / SiO 2 界面处的自间隙浓度与氧化反应动力学密切相关。通过与实验数据的比较,对亚微米LOCOS结构中掺杂物扩散的二维(2-D)模拟证明了新边界条件的有效性。

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