Strain relaxation in GeSi layers with uniform and graded composition

机译：具有均匀且渐变成分的GeSi层中的应变松弛

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We have calculated inter-dislocation spacing and stain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values.

机译：我们使用改进的理论计算了稳定和亚稳应变的Ge x Si 1-x 外延层中的位错间距和污点弛豫。还考虑了具有渐变的Ge组成的外延层。测量退火MBE生长层上的应变松弛，发现其与计算值一致。

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《Solid State Device Research Conference, 1991. ESSDERC '91》|1991年|131-134|共4页
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Jain S.C.; Balka P.; Goorsky M.S.; Iyer S.S.;
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Strain relaxation in GeSi layers with uniform and graded composition

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