首页> 外文期刊>Solid-State Electronics >Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
【24h】

Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

机译:在Si(110)衬底上生长的成分均匀且渐变的SiGe薄膜中的应变松弛机制

获取原文
获取原文并翻译 | 示例
       

摘要

We studied the role of composition grading in the strain relaxation process of SiGe films grown on Si(110) substrates by gas-source molecular beam epitaxy (MBE). The crystalline morphologies of the samples with and without a compositionally step-graded buffer layer were investigated using X-ray diffraction (XRD), a scanning transmission electron microscope (STEM), and an atomic force microscope (AFM). The composition grading was found to suppress the nucleation of growth twins. It was found that the strain relaxation mechanism depended on the growth method of the SiGe layers. In addition, the evolution of the crystalline morphology during step-graded buffer growth was investigated in detail. The evolution of defects during the growth of the graded layers and its relevancy to the strain relaxation process were clarified.
机译:我们研究了成分分级在通过气源分子束外延(MBE)在Si(110)衬底上生长的SiGe薄膜的应变弛豫过程中的作用。使用X射线衍射(XRD),扫描透射电子显微镜(STEM)和原子力显微镜(AFM)研究了有和没有组成逐步分级的缓冲层的样品的晶体形态。发现组成分级可抑制生长孪晶的成核。发现应变松弛机制取决于SiGe层的生长方法。此外,详细研究了逐步梯度缓冲液生长过程中晶体形态的演变。阐明了在梯度层生长过程中缺陷的演变及其与应变松弛过程的相关性。

著录项

  • 来源
    《Solid-State Electronics》 |2009年第10期|1135-1143|共9页
  • 作者单位

    Center for Crystal Science and Technology, Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Center for Crystal Science and Technology, Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Center for Crystal Science and Technology, Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Center for Crystal Science and Technology, Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City Univ., 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;

    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City Univ., 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan;

    Institute for Materials Research, Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Institute for Materials Research, Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    molecular beam epitaxy; SiGe;

    机译:分子束外延硅锗;
  • 入库时间 2022-08-18 01:35:05

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号