Photoluminescence and Lasing Characteristics of 1.3μM GaInNAs/GaAsP/GaAs Strain-compensated Quantum Wells

机译：1.3μm的光致发光和激光特性为1.3μmGainNAS / GaASP / GaAs应变补偿量子孔

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We investigated photoluminescence (PL) and lasing characteristics of 1.3μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

机译：我们通过MOCVD研究了光致发光（PL）和1.3μm的增益/ GAASP / GAAs应变补偿量子孔的激光特性。我们观察到通过施加适当的GAASP屏障来增加PL强度和减少阈值。

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《International symposium on compound semiconductors》|2003年||共2页
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M. Kawaguchi; T. Miyamoto; S. Kawakami; A. Saito; F. Koyama;
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1. Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells [J] . Masao KAWAGUCHI, Tomoyuki MIYAMOTO, Atsushi SAITOH, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第2B期

机译：GaInNAs / GaAsP应变补偿量子阱的光致发光和激光发射特性
2. Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 μ m lasers [J] . Wei Li, Jani Turpeinen, Petri Melanen Journal of Crystal Growth . 2001,第3a4期

机译：用于1.3μm激光器的应变补偿GaInNAs / GaAsP量子阱的生长
3. Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells (λ = 1.28-1.45 μm) with GaAsP Strain-Compensated Layers [J] . Fang-I Lai, Hao-Chung Kuo, Ya-Hsien Chang, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第8期

机译：具有GaAsP应变补偿层的高应变InGaAsN / GaAs量子阱（λ= 1.28-1.45μm）的随温度变化的光致发光
4. Photoluminescence and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells [C] . Kawaguchi, M., Miyamoto, . 2003

机译：1.3 / spl mu / m GaInNAs / GaAsP / GaAs应变补偿量子阱的光致发光和激光发射特性
5. Molecular beam epitaxical growth of strained InAs island quantum boxes on GaAs (100): Growth kinetics, vertical self-organization, and lasing characteristics [D] . Xie, Qianghua 1996

机译：GaAs（100）上应变InAs岛量子盒的分子束外延生长：生长动力学，垂直自组织和激光特性
6. Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots [O] . Qing Yuan, Baolai Liang, Chuan Zhou, 2018

机译：温度和激发强度对InGaAs / GaAs表面量子点光致发光特性的相互作用
7. High-performance strain-compensated InGaAs-GaAsP-GaAs (λ = 1.17 μm) quantum-well diode lasers [O] . Tansu, Nelson, Mawst, Luke J. 2001

机译：高性能应变补偿InGaas-Gaasp-Gaas（λ=1.17μm）量子阱二极管激光器

Photoluminescence and Lasing Characteristics of 1.3μM GaInNAs/GaAsP/GaAs Strain-compensated Quantum Wells

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