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Influence of internal electric fields on the ground level emission of GaN/AlGaN multi-quantum wells

机译:内部电场对GaN / AlGaN多量子井地面排放的影响

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摘要

The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.
机译:GaN / AlGaN量子孔的光谱研究表明,这种结构的发射能量由四个参数,即组成,井宽,应变和电荷密度确定。通过改变这些参数获得的实​​验数据是通过基于包络函数形式主义的分析模型来定量解释,该模型占筛选和内置领域,并通过完全自我一致的紧密绑定模型。

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