X-Ray Characterization of LPOMVPE Grown AlAS/GaAs Multilayer

摘要

X-ray techniques were used for characterization of the AlAsGaAs multilayer grown on GaAs vicinal substrate. The structural parameters like the thickness of the layers, surface and interface roughnesses were derived from specular reflectivity. The verification of layers thicknesses was obtained from high angle #theta#:2#theta# scan after introduction of the correction due to the miscut of the substrate. The comparison of the experimental two-dimensional intensity distribution with the simulated one is based on the mosaic defective model of the multilayer.