Extreme FESEM

摘要

A novel approach to FESEM design integrates new levels (>2x) of low voltage image resolution (～1nm at 1kV) with greatly improved (0.3sr/15x) sensitivity for EDS elemental microanalysis and chemical imaging at new levels of spatial resolution down to <100nm, and in favourable cases with sensitivity limits of 1 - 10nm, while retaining the advantages of robust and representative bulk (mm) SEM samples. At the heart of the new instrument is a symmetrical condenser-objective lens with superior aberrations including new levels of uncorrected Cs values down to 0.1mm.