SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior

摘要

The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance demands for new wide band-gap components increases, so do the requirements for the commutation process. The split output topology provides an additional tool to reduce turn-on losses and boost cross-conduction suppression. Additionally, SiC MOSFET is used to be paralelling to IGBT to achieve further losses and cost reduction.