SiC MOSFET-based Power Modules Utilizing Split Output Topology for Superior Dynamic Behavior

摘要

The body diode reverse recovery charge of a SiC MOSFET is lower than that of an SirnMOSFET, but still not as beneficial as with SiC Schottky diodes. As the switchingrnperformance demands for new wide band-gap components increases, so do thernrequirements for the commutation process. The split output topology provides an additionalrntool to reduce turn-on losses and boost cross-conduction suppression. Additionally, SiCrnMOSFET is used to be paralelling to IGBT to achieve further losses and cost reduction.