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Development of a Powerful Gate-Driver-Circuit for High-Frequency Control of a DC/DC-Converter Based on Gallium Nitride Transistors

机译:基于氮化镓晶体管的DC / DC转换器的高频控制强大的栅极 - 驱动电路的开发

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This work presents a gate-driver-circuit which operates a LLC-half-bridge based on 650 V gallium-nitride transistors. The gate-driver-circuit reaches a switching frequency up to 20 MHz in no-load operation. Up to a switching frequency of 10 MHz, a HV-voltage of 200 V and an output-power of 70 W the function of the LLC-half-bridge can be proven. At a switching frequency of 1 MHz the converter is able to reach an output power of 500 W. Continuous operation is thermally limited at 10 MHz, because the switching losses (60 W per transistor) cannot be sufficiently dissipated despite zero-voltage-switching. In further development, the thermal path could be improved by heat spreading layer between the transistor-case and a water-cooled heat sink with the usage of ceramic substrates. For the gate-driver-circuit and the LLC-half-bridge only commercially components off the shelf were used.
机译:该工作介绍了基于650 V镓 - 氮化物晶体管的LLC半桥操作的栅极驱动电路。 门驱动电路在空载操作中达到高达20 MHz的开关频率。 高达10 MHz的开关频率,HV-电压为200 V和70 W的输出功率,可以证明LLC半桥的功能。 在1 MHz的开关频率下,转换器能够达到500W的输出功率。连续操作在10MHz处热限制,因为尽管零电压切换,但是由于零电压切换而不能充分消散开关损耗(60W)。 在进一步的发展中,通过使用陶瓷基板的使用在晶体管壳体和水冷散热器之间的散热层可以改善热路径。 对于栅极驱动电路和LLC-HALF-桥仅使用搁板上的商业组件。

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