Development of Modularized Electrode in Electro-Kinetic Force Assisted Chemical Mechanical Planarization for Through-Silicon-Via Wafer Planarization

摘要

This paper aims to enhance the Electro-Kinetic Force Assisted Chemical Mechanical Planarization (EKF-CMP) process with a modularized electrode design to generate electro-osmosis flow of slurry circulation for improving the removal rate of trench-silicon-via, TSV Cu-CMP. Experimental test of TSV-CMP with copper blanket wafer and pattern substrates have been performed and investigated. Results have shown that EKF-CMP can achieve material removal rate (MRR) up to 24.19% of blanket Cu-CMP as compared with the conventional CMP. For TSV patterned Cu-CMP, dishing can be reduced by 29.7% compared with conventional CMP. Finally, the EKF-CMP has been verified to improve the MRR and also reducing the dishing of TSV-CMP with this modularized electrode design. Results of such EKF-CMP can be applied on integration devices for hybrid IC demands.