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Transformer-Based Low Voltage Design of 17 GHz Mixers with On-chip Balun Using 0.13-驴m Standard CMOS Process

机译:基于变压器的基于芯片低压降的17 GHz混频器的低压设计,采用0.13-驴标准的CMOS工艺

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摘要

The design of a low supply-voltage mixer with RF frequency of 17.2 GHz using 0.13 驴m standard CMOS process is presented. The prominent features of the design include the use of transformer-based Gilbert-mixer and on-chip passive balun. With 1.2 V supply voltage, the measured results from the finished chip show that the substrate loss must be properly taken into account in balun modeling in order to achieve good agreement between simulation and measured circuit performance.
机译:提出了采用0.13驴米标准CMOS工艺设计的RF频率为17.2 GHz的低电源电压混频器的设计。该设计的突出特点包括使用基于变压器的吉尔伯特混频器和片上无源巴伦。在电源电压为1.2 V的情况下,成品芯片的测量结果表明,在巴伦模型中必须适当考虑衬底损耗,以使仿真与测量电路性能之间达到良好的一致性。

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