An Approach to Detect Negative Bias Temperature Instability (NBTI) in Ultra-Deep Submicron Technologies

摘要

Negative bias temperature instability (NBTI) is a pMOSFET''s degradation mechanism that can result in threshold voltage shift. This shift, if large enough, can cause serious reliability concerns for MOSFET analog and digital circuits. This paper presents a prognostic circuit that measures the V_T shift in a pMOSFET and reports its state-of-health.