Si multidot single-charge tunneling devices

摘要

Si multidot single-charge tunneling devices have been studied from a view point of current modulation by means of light-illumination, side-gate and unintentional self-gate effect. The results provides us the preliminary basis of control of percolation path in a 2D-multidot plane as well as dynamical single-charge transport, which is essential for developing new functional devices.