heterojunction bipolar transistors; power integrated circuits; power measurement; power amplifiers; microwave integrated circuits; radar; gallium compounds; diamond; gold; high power HBT power chips; high efficiency HBT power chips; compact HBT power chips; S-band HBT power chips; gold heat spreaders; diamond heat spreaders; HBT power technology; high power amplifier; high efficiency amplifiers; Ku band; thermal management; power levels; pulsed power measurements; power density; radar systems; communication systems; 31 W; 2.9 GHz; GaInP; GaAs;
机译:用于S波段集电极开路自适应偏置功率放大器设计的高性能SiGe HBT功率单元
机译:适用于2.4 GHz功率放大器应用的高功率密度,高效率1 W SiGe功率HBT
机译:高电压/大功率L / S波段Hbt技术的可靠性
机译:高功率和高效30 W Compact S频段HBT电源芯片,金色或钻石散热器
机译:采用商用0.12微米硅锗HBT技术的30 GHz和90 GHz的Ka波段和W波段毫米波宽带线性功率放大器集成电路,输出功率超过100 mW
机译:通过融合纳米结构多孔薄膜和IDE-Microheater芯片实现快速响应灵敏且低功耗的化学传感器
机译:S波段HBT功率的准确表征放大器同时使用S参数和 ud负载拉力测量