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An effective method of characterization poly gate CD variation and its impact on product performance and yield

机译:表征多晶硅栅极CD变化的有效方法及其对产品性能和良率的影响

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摘要

Poly gate CD variation has been increasingly affecting product performance and yield in advanced process technology. Here a BIST pattern based poly gate CD measurement (tilo) methodology is introduced in FPGA product. FPGA circuit is programmed into small local BIST pattern (tilo) and its delay is accurately reflecting local poly gate CD and variation. This methodology can conveniently capture poly gate CD statistical variation at both intra field and inter field level. The paper shows that this tilo measurement is very useful in guiding poly process debugging and yield improvement work.
机译:多晶硅闸门CD的变化已日益影响先进工艺技术中的产品性能和良率。这里,在FPGA产品中介绍了一种基于BIST模式的多晶硅栅极CD测量(tilo)方法。 FPGA电路被编程为小的局部BIST模式(tilo),其延迟可准确反映局部多晶硅栅极CD和变化。这种方法可以方便地捕获场内和场间水平的多闸门CD统计变化。本文表明,这种tilo测量对于指导多晶硅工艺调试和成品率提高工作非常有用。

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