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Interfacial coherence and lateral indium segregation in thick InGaAs single heterostructures grown on GaAs substrates

机译：在GaAs衬底上生长的厚InGaAs单异质结构中的界面相干性和横向铟偏析

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《》|2000年|P.240-243|共4页
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Absin; R.; Madebo; M.;
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中图分类无线电电子学、电信技术;
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1. Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD [J] . A.S. Sozykin, S.S. Strelchenko, E.V. Prokolkin, Journal of Crystal Growth . 2013,第JANa15期

机译：MOCVD生长InGaAs / GaAs异质结构中铟的热力学和动力学
2. Reduction f indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs (001) substrates [J] . S.Martini, A.A.Quivy, A.Tabata Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena . 2000,第4期

机译：在邻近GaAs（001）衬底上通过分子束外延生长的InGaAs / GaAs量子阱中的铟偏析
3. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates [J] . S. Martini, A. A. Quivy, T. E. Lamas, Physical review. B, Condensed Matter And Materials Physics . 2005,第15期

机译：实时RHEED研究相邻GaAs（001）衬底上生长的InGaAs层中铟的偏析
4. Interfacial coherence and lateral indium segregation in thick InGaAs single heterostructures grown on GaAs substrates [C] . R. Absin, M. Madebo, T. Warminski, International Semiconducting and Insulating Materials Conference . 2000

机译：在GaAs基材上生长厚InGaAs单个异质结构的界面相干与侧向铟偏析
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature [O] . Mohamed Benyoucef, Verena Zuerbig, Johann Peter Reithmaier, 2012

机译：高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
7. A Novel Sample Structure for the Measurement of Indium Segregation Profiles in GaAs/InGaAs/GaAs Heterostructures [O] . A. Loykaew, B. F. Usher, R. T. Jones, 2013

机译：测量GaAs / InGaAs / GaAs异质结构中铟偏析轮廓的新型样品结构
8. AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy [R] . Wang, C. A., Walpole, J. N., Missaggia, L. J., 1991

机译：有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器

Interfacial coherence and lateral indium segregation in thick InGaAs single heterostructures grown on GaAs substrates

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