A new observation of hot-carrier induced interface traps spatial distribution in 0.135 /spl mu/m n-MOSFET by gate-diode method

摘要

In this work, the interface traps spatial distribution in 0.135 /spl mu/m n-MOSFET under V/sub G/ = V/sub D//2 stress mode by gated-diode method was studied. Not only interface traps generated in drain region trend to saturate at the beginning of hot carrier stress, but also interface traps generated in channel may trend to saturate. Interface traps generated in source region show no saturation and increase device source-drain parasitic resistance linearly along stress time. This experiment result is tentatively interpreted by MRS model that the distance from mobile hydrogen generating location to interface location determines interface traps generation rate and saturation time at interface location.