Monolithic dielectric BST infrared sensor arrays using a novel silicon-ferroelectric integration scheme based on improved porous silicon micromachining

摘要

Integration of thin film ferroelectrics with readout circuits on silicon offers a route to low-cost fabrication of uncooled infrared imaging sensor arrays. This paper presents an integrated dielectric Ba/sub 0.64/Sr/sub 0.36/TiO/sub 3/ infrared sensor array, which integrates standard MOSFET IC processes, ferroelectric thin film processes and an improved porous silicon micromachining. The measured results indicate that the sensor has a sensitivity of 5.24 kV/W, a detectivity of 1.31/spl times/10/sup 8/cmHz/sup 1/2//W, and a thermal time constant of 3.3 ms. An IR image example is given.