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Surface acoustic wave bandpass filters properties of AlN thin films sputtered on LiNbO/sub 3/ substrates

机译:LiNbO / sub 3 /衬底上溅射的AlN薄膜的表面声波带通滤波器特性

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Surface acoustic wave (SAW) filter properties such as center frequency (F/sub c/) and 3dB bandwidth of aluminum nitride (AlN) thin films sputtered on z-cut LiNbO/sub 3/ substrates were investigated. Highly c-axis prefer-oriented AlN thin films deposited on z-cut LiNbO/sub 3/ substrates were obtained by reactive rf magnetron sputtering. The results of our experiments showed that F/sub c/ of SAW filter was increased significantly for the increase of h//spl lambda/, where h was the AlN film thickness and /spl lambda/ was the wavelength of SAW. Comparing the SAW propagate along with the z-cut LiNbO/sub 3/ single crystal, the AlN/LiNbO/sub 3/ based surface acoustic wave (SAW) devices could improve the velocity of SAW. The 3dB bandwidth of SAW filter was decreased by the increase of h//spl lambda/ meaning that frequency selection getting stricter.
机译:研究了在z切割LiNbO / sub 3 /衬底上溅射的表面声波(SAW)滤波器的性能,例如中心频率(F / sub c /)和3dB带宽的氮化铝(AlN)薄膜。通过反应性射频磁控溅射,获得了沉积在Z形LiNbO / sub 3 /衬底上的高度c轴的择优取向AlN薄膜。我们的实验结果表明,随着h / spl lambda /的增加,SAW滤波器的F / sub c /显着增加,其中h是AlN膜厚度,/ spl lambda /是SAW的波长。比较SAW与z切割LiNbO / sub 3 /单晶一起传播,基于AlN / LiNbO / sub 3 /的表面声波(SAW)器件可以提高SAW的速度。 h // spl lambda /的增加降低了SAW滤波器的3dB带宽,这意味着频率选择越来越严格。

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