首页> 外国专利> Method for manufacturing a surface acoustic wave filter using a three-layer thin film of aluminum nitride (AlN) / hydrogenated aluminum nitride (AlN: H) / aluminum nitride (AlN)

Method for manufacturing a surface acoustic wave filter using a three-layer thin film of aluminum nitride (AlN) / hydrogenated aluminum nitride (AlN: H) / aluminum nitride (AlN)

机译:使用氮化铝(AlN)/氢化氮化铝(AlN:H)/氮化铝(AlN)的三层薄膜制造表面声波滤波器的方法

摘要

The present invention relates to a method of manufacturing a surface acoustic wave filter using an aluminum nitride (AlN) thin film and a surface acoustic wave filter manufactured thereby. More particularly, the present invention relates to an aluminum nitride (AlN: H) thin film formed by depositing aluminum nitride (AlN) on both sides in order to prevent blistering by protecting the hydrogenated aluminum nitride (AlN: A method for manufacturing a surface acoustic wave filter using triple layered films of AlN / hydrogenated aluminum nitride (AlN: H) / aluminum nitride (AlN) and a surface acoustic wave filter fabricated thereby. An elastic surface using a three-layer thin film of aluminum nitride (AlN) / hydrogenated aluminum nitride (AlN: H) / aluminum nitride (AlN) as a piezoelectric material and a manufacturing method of the filter are easy and economical, A surface acoustic wave filter having a large electromechanical coupling coefficient is manufactured.
机译:本发明涉及一种使用氮化铝(AlN)薄膜的表面声波滤波器的制造方法以及由此制造的表面声波滤波器。更具体地,本发明涉及通过在两侧上沉积氮化铝(AlN)以通过保护氢化氮化铝来防止起泡而形成的氮化铝(AlN:H)薄膜(AlN:用于制造表面声波的方法。使用AlN /氢化氮化铝(AlN:H)/氮化铝(AlN)的三层膜的电磁波滤波器和由此制造的表面声波滤波器;使用氮化铝(AlN)/氢化三层薄膜的弹性表面作为压电材料的氮化铝(AlN:H)/氮化铝(AlN)及其滤波器的制造方法容易且经济,因此,制造机电耦合系数大的弹性表面波滤波器。

著录项

  • 公开/公告号KR19980057515A

    专利类型

  • 公开/公告日1998-09-25

    原文格式PDF

  • 申请/专利权人 윤덕용;

    申请/专利号KR19960076809

  • 发明设计人 이재영;용윤중;김윤기;한영수;

    申请日1996-12-30

  • 分类号H03H9/64;

  • 国家 KR

  • 入库时间 2022-08-22 02:47:54

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号