Enhancem ent of the surface and bonding characteristics of Aluminum nitride (AlN) thin film

摘要

Production of an aluminum nitride thin layer comprises subjecting the thin layer to a microwave plasma after is has been deposited. Preferred Features: The plasma treatment is carried out using a chemically reactive gas selected from gaseous nitrogen, hydrogen and ammonia. The gas acts to accelerate ions onto the thin layer to achieve an etching effect. The gas may be argon, helium, neon, krypton or xenon.