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Stress-induced leakage current in thin oxides under high-field impulse stressing

机译:高场脉冲应力下薄氧化物中应力引起的泄漏电流

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Stress-induced leakage current (SILC) decreases when the time-between-pulses (T/sub bp/) of an AC-pulse waveform is increased. The amount of SILC reduction generally decreases for the same increase in T/sub bp/, with increasing stress voltage magnitude and stress pulse width. A model developed to describe the trap generation and relaxation processes occurring during transient high-field stress from unipolar and bipolar pulse waveforms is presented in this paper.
机译:当交流脉冲波形的脉冲之间的时间间隔(T / sub bp /)增加时,应力引起的泄漏电流(SILC)减小。对于T / sub bp /的相同增加,随着应力电压幅度和应力脉冲宽度的增加,SILC的减少量通常会减少。本文提出了一个模型来描述陷阱的产生和弛豫过程,该陷阱是由单极和双极脉冲波形在瞬态高场应力期间发生的。

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