A novel physical based model of deep-submicron CMOS transistors mismatch for Monte Carlo SPICE simulation

摘要

The aim of this paper is to present a new physical based SPICE model for the deep-submicron CMOS transistors mismatch. It starts from the well known Pelgrom's area law and adds the second order effects specific to deep-submicron devices (lateral diffusion, charge sharing, channel doping fluctuation, mobility degradation, etc). The matching parameters are computed directly from the process parameters, and scaling down equations were developed and experimentally verified. The resulting matching model is independent of the SPICE level used for MOSFET modeling, being valid both for the simple Level 3 and the high complexity BSIM3 model. The model was experimentally verified for a wide range of CMOS processes (0.4 /spl mu/m, 0.35 /spl mu/m, 0.25 /spl mu/m and 0.18 /spl mu/m), showing a better accuracy in comparison with the existing matching models, that give significant errors when used for deep-submicron devices.