The effects of post annealing on oxide-charge-to-breakdown and interface state in tungsten polycide gate

摘要

The dependence of oxide charge-to-breakdown (Q/sub BD/) and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technology have been experimentally investigated. The experimental results suggest that Q/sub BD/ and degradation are improved by lower temperature and shorter time of RTA. Whereas the FA/RTA annealing sequence is more advantageous for improving Q/sub BD/, the RTA/FA annealing sequence is good for improving device degradation.