A high-density MMIC V-band down-converter that employs the masterslice 3DMMIC technology and photosensitive BCB dielectric film, is presented. The down-converter is structured using an 8/spl times/2 master array in a 1.84 mm/spl times/0.87 mm chip. A down-converter MMIC with H-MESFET with f/sub max/ of 130 GHz demonstrates the gain of 19.3 dB and image rejection ratio of above 18 dB over the frequency range of 56.5 GHz to 59.5 GHz; its associated gain-density is five times higher than that of conventional MMICs.
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机译:提出了采用母片3DMMIC技术和光敏BCB介电膜的高密度MMIC V波段下变频器。下变频器使用1.84 mm / spl times / 0.87 mm芯片中的8 / spl times / 2主阵列构成。具有f / sub max /的H-MESFET的下变频器MMIC为130 GHz,在56.5 GHz至59.5 GHz的频率范围内显示出19.3 dB的增益和18 dB以上的镜像抑制比;其相关的增益密度是传统MMIC的五倍。
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