V-Band Jhmt mmics using BCB Thin-Film Layers on GaAs Substrates

摘要

The authors have developed v-band high elec- tron mobility transistor (HEMT) MMICs adopting benzo-cyclo- butene (BCB) thin-film layers on GaAs substrates. Since the BCB thin-film layers , which can change the thickness of arbitrary Parts on a circuit, are used for these MMICs, both a thin-film mi- Crostrip (TFMS) line, offering the advantages of great flexibility In layout and small size, and a coplanar waveguide (CPW), offer- Ing the advantage of low loss, can be used according to the pur- Pose of the MMIC.