Physical properties of semiconducting transition metal silicides and their prospects in Si-based device applications

摘要

Semiconducting transition metal silicides are of interest as potential candidates for new Si-based devices. The recent advances obtained on the understanding of the physical properties of this group of materials are summarized with special emphasis on /spl beta/-FeSi/sub 2/. Characteristic features of the electronic structure are outlined. Interband and infrared optical properties are in good agreement with theoretical predictions. Light emission could be observed from implanted /spl beta/-FeSi/sub 2/ layers only. Incorporation of corresponding dopants gives n- and p-type material. Carrier interaction with nonpolar optical and acoustic phonons as well as neutral impurities has to be taken into account. The problems and prospects of application of semiconducting silicides are discussed.