Fourier transform infrared spectroscopy (FTIR), SIMS and Raman scattering of heavily carbon doped MOCVD grown In/sub 0.53/Ga/sub 0.47/As

摘要

InGaAs layers were grown on InP substrates by MOCVD using CBr/sub 4/ sources and 3/spl times/10/sup 19/ cm/sup -3/ doping was achieved upon annealing and de-passivation from hydrogen. The impact of annealing was investigated by FTIR, SIMS and Hall measurements. The results show the presence of the H-(C/sub As/)/sub 2/ complex and a loss of hydrogen upon annealing which is estimated to be /spl sim/33% by FTIR and /spl sim/50% by SIMS. These results are consistent considering the fact that FTIR refers only to C-H bonds. In and As variations near the surface and some carbon concentration variation upon annealing is also reported.