Electrochemical and Spectroelectrochemical Analysis of the Oxide / p-INP (p-Indium Phosphide) Semiconductor Surface Using FTIR (Fourier Transform Infrared) and Raman Scattering Spectroscopies

摘要

Raman scattering and FTIR reflectance spectroscopies have been used to examine p-InP/oxide surfaces. The thin anodic oxide film grown in pH 6 tartaric acid solutions is found to be primarily indium dihydrogen phosphate. This layer gives rise to an appreciable reduction in band bending (as much as 300 mV) which is similar to that obtained by open circuit photovoltage measurements. The photocurrent-voltage behavior of p-InP/oxide shows that the growth of anodic oxide at p-InP introduces significant surface states which act as surface recombination centers. Considerable interest has been shown in recent years in the compound semiconductor p-InP because of its importance in application in semiconductor electronic devices and photoelectrochemical solar cells. The efficiency and performance of these devices depend very critically on the surface preparation. Reprints. (jes)