Effects of a Bi/sub 4/Ti/sub 3/O/sub 12/ buffer layer on SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films prepared by the metal organic solution deposition technique

摘要

Ferroelectric SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) thin films with 20 mol% excess Bi content have been deposited on the Bi/sub 4/Ti/sub 3/O/sub 12/ (BTO) buffered Pt/Ti/SiO/sub 2//Si substrates using the metal organic solution deposition (MOSD) technique at annealing temperatures ranging from 650/spl deg/C to 750/spl deg/C. The BTO single buffer layer with different excess Bi content (0 mol%, 20 mol% and 40 mol%) was prepared by the same deposition method. No pyrochlore phase was found in the SBT thin films although the Bi/sub 2/Ti/sub 2/O/sub 7/ phase appeared in the BTO buffer layer. The effects of the BTO buffer layer and post annealing temperature on the dielectric and ferroelectric properties of SBT thin films were analyzed.