首页> 外文会议>MRS fall meeting >Characterization of Epitaxial Bi-Layer-Structured Bi_5Ti_3FeO_(15) (m = 4) and Bi_4Ti_3O_(12)- Bi_5Ti_3FeO_(15) (m = 3-4) Natural-Superlattice-Structured Multiferroic Thin Films Prepared by Pulsed Laser deposition
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Characterization of Epitaxial Bi-Layer-Structured Bi_5Ti_3FeO_(15) (m = 4) and Bi_4Ti_3O_(12)- Bi_5Ti_3FeO_(15) (m = 3-4) Natural-Superlattice-Structured Multiferroic Thin Films Prepared by Pulsed Laser deposition

机译:脉冲激光沉积制备的外延双层结构Bi_5Ti_3FeO_(15)(m = 4)和Bi_4Ti_3O_(12)-Bi_5Ti_3FeO_(15)(m = 3-4)的自然超晶格结构多铁性薄膜的表征

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Bi-layer-structured mutiferroic Bi_5Ti_3FeO_(15) (BTFO15) (m = 4) and natural-superlattice-structured Bi_4Ti_3O_(12)- Bi_5Ti_3FeO_(15) (BIT-BTFO15) (m = 3-4) thin films have been prepared on (001) and (110) oriented SrTiO_3 (STO) single crystal substrates by using pulsed laser deposition. X-ray diffraction patterns of these thin films on (001) STO single crystals shows the obtained thin films were (OOZ)-oriented layer-perovskite single phase, and BIT-BTFO15 (m = 3-4) natural-superlattice-structure has also been obtained. On (110) STO single crystal, layer perovskite (11l) oriented thin films have also been obtained. For characterizing ferroelectric properties, these thin films have been prepared on (001) and (110) oriented La-doped (3.73 wt%) STO single crystal substrates. From ferroelectric D-E hysteresis loops measurements, BTFO15 (m = 4) and BIT-BTFO (m = 3-4) thin films on (110) La-doped STO single crystals shows good ferroelectric hysteresis loops and their double remanent polarizations (2P_r) were 47 μC/cm~2 and 44 μC/cm~2, respectively. However, these thin films on (001) La-doped STO single crystals do not show ferroelectric characteristics.
机译:已经制备了双层结构的变质Bi_5Ti_3FeO_(15)(BTFO15)(m = 4)和自然超晶格结构的Bi_4Ti_3O_(12)-Bi_5Ti_3FeO_(15)(BIT-BTFO15)(m = 3-4)薄膜通过脉冲激光沉积在(001)和(110)取向的SrTiO_3(STO)单晶衬底上。这些薄膜在(001)STO单晶上的X射线衍射图表明,所获得的薄膜为(OOZ)取向的层钙钛矿单相,并且BIT-BTFO15(m = 3-4)的自然超晶格结构具有也获得了。在(110)STO单晶上,也获得了钙钛矿(11l)层取向的薄膜。为了表征铁电特性,已在(001)和(110)取向的La掺杂(3.73 wt%)STO单晶衬底上制备了这些薄膜。根据铁电DE磁滞回线测量,在(110)掺La的STO单晶上的BTFO15(m = 4)和BIT-BTFO(m = 3-4)薄膜显示出良好的铁电磁滞回线,并且它们的双剩余极化(2P_r)为分别为47μC/ cm〜2和44μC/ cm〜2。但是,在(001)La掺杂的STO单晶上的这些薄膜没有显示铁电特性。

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