A unified substrate current model for weak and strong impact ionization in sub-0.25 /spl mu/m NMOS devices

摘要

We have developed a new unified substrate current model for weak and strong impact-ionization. The model which is semi-empirical is able to capture non-local field effects. The importance of this model is its simplicity requiring three parameters which can be extracted easily from a single wafer-level measurement. The implementation of this model in a circuit simulator provides the capability to include hot-carrier and ESD effects into circuit design optimization, which is essential for achieving design-in-reliability targets.