A simple technique to increase the switching speed of the MOS transistor

摘要

This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circuit realizes an increase of the switching speed up to 50% for n-MOS transistor and around 20% for p-MOS. Also, SPICE circuit simulations and a first order modelling show superior performance of this technique over conventional switch.