Properties of sol-gel-derived lead zirconate titanate (PZT) thin films on platinum-coated silicon substrates

摘要

Lead zirconate titanate thin films with a composition near the morphotropic phase boundary were prepared by the sol-gel method. Films were crystallized by a rapid thermal annealing (RTA) process. X-ray diffraction was used to monitor the crystallization of the processed films. The microstructure of the films was observed using field-emission scanning electron microscopy. The ferroelectric and dielectric properties of the PZT films fabricated under various annealing conditions were studied. The films showed good hysteresis loops with P/sub /spl tau//=30 /spl mu/C/cm/sup 2/ and E/sub c/=70 kV/cm. Piezoelectric properties were measured by both single beam and double beam interferometers.