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High wiring density Cu-polyimide thin film multilayer circuit which is realized by the vertical plated small via

机译:通过垂直电镀的小通孔实现高布线密度的Cu-聚酰亚胺薄膜多层电路

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摘要

A fabrication process for Cu-polyimide thin film multilayer circuit has been developed for advanced multichip module. The multilayer circuit realizes a high wiring density circuit by applying Cu studs which are deposited by electroplating using the guide patterns made of thick positive photoresist, photosensitive polyimide for insulating layers which has low reactivity against Cu, and a polishing process for planarizing dielectric layers. This paper reports on the structure of the circuit and on the thin film process technology.
机译:已经开发出用于高级多芯片模块的Cu-聚酰亚胺薄膜多层电路的制造工艺。多层电路通过使用由厚的正性光致抗蚀剂制成的引导图案,通过对铜具有低反应性的绝缘层用光敏聚酰亚胺和对铜具有低反应性的抛光工艺涂覆的铜柱来实现高布线密度电路。本文报告了电路的结构和薄膜工艺技术。

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