Influence of electric field of surface acoustic wave on the low temperature photoluminescence of type II GaAs/AlAs superlattice

摘要

GaAs/AlAs - superlattice is one of most extensively investigated quantum-dimensional structures objects, the interest to which is caused by its capability to change optical and transport properties, varying the layer thickness. In low dimensional semiconductor structures the field of a surface acoustic wave can be used to control lifetime and transport properties of the photogenerated carriers. The surface acoustic wave (SAW) electric field influence on radiative recombination in type II GaAs/AlAs superlattices hasn't been studied. In this paper the effect of surface acoustic wave (SAW) electric field on a steady-state photoluminescence (PL) of X/sub z/ excitons in GaAs/AlAs type II superlattices was investigated and discussed. It is shown, that the intensity of PL decreased with growth SAW power. These effects are attributed to the ionization of the excitons by SAW electric field.