A new PZT thin film preparation technique using solid oxygen-source target by RF reactive sputtering

摘要

A new target for RF reactive sputter deposition technique was adopted to deposit lead zirconate titanate (Pb(Zr,Ti)O/sub 3/) thin films using a metal-oxide composite (ZrTi+30%PbO/sub n/ (n=l,2)) targets. PZT films were deposited on Pt/Ti/SiO/sub 2//Si substrate with temperature varied from 200 to 550/spl deg/C, O/sub 2/-Ar mixture gas was used for the sputtering with changing the mixing ratio from 0% to 6.3%. In this study it is confirmed that PbO/sub 2/ supplied more oxygen than PbO by the gas analyzer. Moreover perovskite PZT peak was observed in XRD measurement for film grown with PbO/sub 2/ target without introducing any oxygen gas during the deposition, whereas no peak was observed for PbO target under the same conditions.