Demonstration of a 140 A, 800 V, fast recover 4H-SiC P-i-N/Schottky barrier (MPS) diode

摘要

DC and transient test results of high power, fast recovery 4H-SiC MPS diodes using multi-step junction termination (MJTE) designs are presented. The MJTE design allows full utilization of the superior breakdown properties of SiC. 4H-SiC MPS diode DC properties were studied and the transient properties were obtained by using an inductively-loaded half-bridge inverter circuit at high current and high temperatures (high-T). Results show that the replacement of Si freewheeling diodes by SiC diodes results in far less storage charge in the diodes and substantial reduction in diode turn-off energy loss, especially at high-T.