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Studies Of Plasma Uniformity And Global Wafer Charging In A High Density, Inductively Coupled Metal Etcher

机译：高密度感应耦合金属蚀刻机中等离子体均匀性和整体晶圆充电的研究

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《》|2001年|P.255-258|共4页
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Patrick; R.; Jones; P.;
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中图分类无线电电子学、电信技术;
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1. Experimental and theoretical study of two-dimensional ion flux uniformity at the wafer plane in inductively coupled plasmas [J] . Tae Won Kim, Aydil E.S. IEEE Transactions on Plasma Science . 2003,第4期

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2. Control of electron velocity distributions at the wafer by tailored voltage waveforms in capacitively coupled plasmas to compensate surface charging in high-aspect ratio etch features [J] . Hartmann P., Wang L., Noesges K., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2021,第25期

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3. Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas [J] . Huard Chad M., Lanham Steven J., Kushner Mark J. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2018,第15期

机译：电感耦合等离子体中晶片尺寸均匀性蚀刻原子层蚀刻的后果
4. Studies Of Plasma Uniformity And Global Wafer Charging In A High Density, Inductively Coupled Metal Etcher [C] . Patrick R., Jones P., Institute of Electric and Electronic Engineer International Symposium on Plasma Process-Induced Damage . 2001

机译：高密度，电感耦合金属蚀刻器中的等离子体均匀性和全局晶片充电的研究
5. Comparison of high-density electron cyclotron resonance and inductively coupled plasma sources for etching of electronic materials: New plasma etch regimes for electronic materials. [D] . Lee, Jewon. 1997

机译：用于电子材料蚀刻的高密度电子回旋共振和感应耦合等离子体源的比较：电子材料的新等离子体蚀刻方案。
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7. A Study on the Surface of the Dry Etched TaN Thin Film by Adding The CH4Gas in BCl3/Ar Inductively Coupled Plasma [O] . Jong-Chang Woo, Chang-Auck Choi, Woo-Seok Yang, 2013

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Studies Of Plasma Uniformity And Global Wafer Charging In A High Density, Inductively Coupled Metal Etcher

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