APPARATUS FOR GENERATING INDUCTIVELY COUPLED PLASMA AND A DRIVING METHOD THEREOF CAPABLE OF UNIFORMLY FORMING AN ETCH RATE/ DEPOSITION RATE ON A CENTRAL PART AND AN EDGE PART OF A SEMICONDUCTOR WAFER OR A GLASS SUBSTRATE

摘要

PURPOSE: An apparatus for generating inductively coupled plasma and a driving method thereof are provided to uniformly form plasma density a central part and an edge part in a chamber of a plasma generating apparatus by raising a coil center part of a vibration antenna according to detected frequencies.;CONSTITUTION: A vibration antenna(101) vibrates with high frequency power offered from high frequency power supply. An antenna operating unit(103) is connected to a coil center of the vibration antenna. A chamber(116) is located at a lower part of the vibration antenna. The chamber generates plasma with a magnetic line of the vibration antenna. A frequency detection sensor(109) senses the frequency of the vibration antenna. A controller(104) calculates a zeta value which is proportional to the density of the plasma according the frequency inputted from the frequency detection sensor. The controller controls the operation of the antenna operating unit according to the zeta value.;COPYRIGHT KIPO 2012