Inductively-coupled plasma reactor for plasma uniformity and efficiency enhancement and method for manufacturing semiconductor substrate using the device

摘要

The present invention provides a type of inductance coupled plasma. Among the cells, including confidentiality, the ceiling included in the airtight cell made of an insulating material is an insulating material at least consists of a window. The substrate support is mounted to the lower portion of the insulating material window airtight cells. The radio frequency power supply is located on top of the insulating material window, the radio frequency radiated energy is penetrated into the insulating material to the inside of the airtight window cells. A plurality of process gas is supplied into the airtight injector count the process gas is evenly distributed on the substrate support. The cyclic control is guiding the process gas is located in the lower and the upper plurality of process gas injector and the substrate support inside the airtight cells. ;