首页> 外国专利> INDUCTANCE COUPLING PLASMA DEVICE FOR IMPROVING PLASMA UNIFORMITY AND EFFICIENCY CAPABLE OF RESOLVING THE PROBLEM OF THE INHOMOGENEITY OF PROCESSING GAS AND A METHOD FOR MANUFACTURING CONDUCTOR SUBSTRATE USING THE SAME

INDUCTANCE COUPLING PLASMA DEVICE FOR IMPROVING PLASMA UNIFORMITY AND EFFICIENCY CAPABLE OF RESOLVING THE PROBLEM OF THE INHOMOGENEITY OF PROCESSING GAS AND A METHOD FOR MANUFACTURING CONDUCTOR SUBSTRATE USING THE SAME

机译:用于改善等离子体均匀性和解决处理气体不均一性问题的效率的电感耦合等离子体装置以及使用该装置制造导体基质的方法

摘要

PURPOSE: An inductance coupling plasma device for improving plasma uniformity and efficiency and a method for manufacturing conductor substrate using the same are provided to uniformly process processing gas at the central and peripheral areas of a substrate by installing a controller between the upper part of a substrate support stand and the lower part of a processing gas injector.;CONSTITUTION: A sealing cell is formed including a metallic side wall(205) and an insulation ceiling(207). A pedestal(210) and a chuck(215) support a substrate(220). A RF power supply(245) radiates wireless frequency energy to the sealing cell. Processing gas injectors(230,235) supply processing gas to the inside of the sealing cell. A controller(270) is positioned at the lower part of the processing gas injector to restrict the flow of the processing gas.;COPYRIGHT KIPO 2013
机译:目的:提供一种用于改善等离子体均匀性和效率的电感耦合等离子体装置及其制造导体基板的方法,以通过在基板的上部之间安装控制器来均匀地处理基板的中央和周边区域的处理气体。支架:处理气体喷射器的下部;组成:形成一个密封单元,包括金属侧壁(205)和绝缘顶棚(207)。基座(210)和卡盘(215)支撑基板(220)。 RF电源(245)向密封单元辐射无线频率能量。处理气体喷射器(230,235)将处理气体供应到密封单元的内部。控制器(270)位于处理气体喷射器的下部,以限制处理气体的流量。; COPYRIGHT KIPO 2013

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