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INDUCTANCE COUPLING PLASMA DEVICE FOR IMPROVING PLASMA UNIFORMITY AND EFFICIENCY CAPABLE OF RESOLVING THE PROBLEM OF THE INHOMOGENEITY OF PROCESSING GAS AND A METHOD FOR MANUFACTURING CONDUCTOR SUBSTRATE USING THE SAME
INDUCTANCE COUPLING PLASMA DEVICE FOR IMPROVING PLASMA UNIFORMITY AND EFFICIENCY CAPABLE OF RESOLVING THE PROBLEM OF THE INHOMOGENEITY OF PROCESSING GAS AND A METHOD FOR MANUFACTURING CONDUCTOR SUBSTRATE USING THE SAME
PURPOSE: An inductance coupling plasma device for improving plasma uniformity and efficiency and a method for manufacturing conductor substrate using the same are provided to uniformly process processing gas at the central and peripheral areas of a substrate by installing a controller between the upper part of a substrate support stand and the lower part of a processing gas injector.;CONSTITUTION: A sealing cell is formed including a metallic side wall(205) and an insulation ceiling(207). A pedestal(210) and a chuck(215) support a substrate(220). A RF power supply(245) radiates wireless frequency energy to the sealing cell. Processing gas injectors(230,235) supply processing gas to the inside of the sealing cell. A controller(270) is positioned at the lower part of the processing gas injector to restrict the flow of the processing gas.;COPYRIGHT KIPO 2013
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