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Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

机译：InGaN / GaN多量子阱结构中的双组分光致发光衰减和载流子定位

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来源
《》|2001年|P.220-221|共2页
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作者
Shih-Wei Feng; Yung-Chen Cheng; Yan; C.C.;
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中图分类无线电电子学、电信技术;
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1. Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structures [J] . Yen-Cheng Lu, Cheng-Yen Chen, Hsiang-Chen Wang, Journal of Applied Physics . 2007,第6期

机译：载流子俘获对具有纳米团簇结构的InGaN / GaN量子阱中光致发光衰减时间的影响
2. The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures [J] . Hammersley S. Journal of Applied Physics . 2012,第8期

机译：高注入的载流子密度对InGaN / GaN量子阱结构中载流子局部化和效率下降的影响
3. The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures [J] . S. Hammersley, D. Watson-Parris, P. Dawson, Journal of Applied Physics . 2012,第8期

机译：高注入的载流子密度对InGaN / GaN量子阱结构中载流子局部化和效率下降的影响
4. Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures [C] . Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang, Pacific Rim Conference on Lasers and Electro-Optics . 2001

机译：IngaN / GaN多量子阱结构中的双组分光致发光衰减和载波定位
5. InGaN/GaN multiple quantum well structures: Submicron structural, optical, electrical and chemical properties. [D] . Li, Ying. 2013

机译：InGaN / GaN多量子阱结构：亚微米结构，光学，电和化学性质。
6. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence [O] . Yao Xing, Degang Zhao, Desheng Jiang, 2019

机译：用光致发光研究InGaN / GaN量子阱中两种局部状态之间的载流子重分布
7. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence [O] . Yao Xing, Degang Zhao, Desheng Jiang, 2019

机译：通过光致发光研究的Ingan / GaN量子孔的两种局部状态之间的载体再分配

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

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