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机译:高注入的载流子密度对InGaN / GaN量子阱结构中载流子局部化和效率下降的影响
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester, MI3 9PL, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester, MI3 9PL, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester, MI3 9PL, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester, MI3 9PL, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester, MI3 9PL, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge,CB2 3QZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge,CB2 3QZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge,CB2 3QZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge,CB2 3QZ, United Kingdom;
机译:高注入的载流子密度对InGaN / GaN量子阱结构中载流子局部化和效率下降的影响
机译:InGaN / GaN量子阱结构中载流子密度相关的局部化和效率下降的后果
机译:高电流密度下GaN LED的效率下降:隧穿漏电流和InGaN / GaN量子阱中不完整的横向载流子局部化
机译:IngaN纳米结构中的载体重组:量子点中的载体定位,通过量子局限性血迹效应载流子分离
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:InGaN / GaN多量子阱LED纳米线中的载流子局部化效应:发光量子效率的提高和负热活化能
机译:高注射载波密度对Ingan / GaN量子井结构载流子定位和效率下垂的后果